@article{5f9f5cd3e1b844cfa4e355fac9a45c47,
title = "Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda \textasciitilde{} 980 nm) grown by gas-source MBE",
author = "G. Zhang and A. Ovtchinnikov and J. N{\"a}ppi and H. Asonen and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "29",
pages = "1943--1949",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
}