`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

K. D. Hobart; P. E. Thompson; S. L. Rommel; T. E. Dillon; P. R. Berger; D. S. Simons; P. H. Chi

doi:10.1116/1.1339011

`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

K. D. Hobart, P. E. Thompson, S. L. Rommel, T. E. Dillon, P. R. Berger, D. S. Simons, P. H. Chi

Tutkimustuotos: Artikkeli › Scientific › vertaisarvioitu

14 Sitaatiot (Scopus)

Abstrakti

Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.

Alkuperäiskieli	Englanti
Sivut	290-293
Sivumäärä	4
Julkaisu	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Vuosikerta	19
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1116/1.1339011
Tila	Julkaistu - 2001
Julkaistu ulkoisesti	Kyllä
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

!!ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Pääsy asiakirjaan

10.1116/1.1339011

Siteeraa tätä

@article{8e030f55458b4bec93952eb096f38f45,

title = "`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy",

abstract = "Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.",

author = "Hobart, {K. D.} and Thompson, {P. E.} and Rommel, {S. L.} and Dillon, {T. E.} and Berger, {P. R.} and Simons, {D. S.} and Chi, {P. H.}",

year = "2001",

doi = "10.1116/1.1339011",

language = "English",

volume = "19",

pages = "290--293",

number = "1",

}

TY - JOUR

T1 - `p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

AU - Hobart, K. D.

AU - Thompson, P. E.

AU - Rommel, S. L.

AU - Dillon, T. E.

AU - Berger, P. R.

AU - Simons, D. S.

AU - Chi, P. H.

PY - 2001

Y1 - 2001

N2 - Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.

AB - Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.

U2 - 10.1116/1.1339011

DO - 10.1116/1.1339011

M3 - Article

AN - SCOPUS:0035083659

VL - 19

SP - 290

EP - 293

IS - 1

ER -

`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

Abstrakti

!!ASJC Scopus subject areas

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