Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Arto Aho; Riku Isoaho; Antti Tukiainen; Ville Polojärvi; Marianna Raappana; Timo Aho; Mircea Guina

doi:10.1051/e3sconf/20171603008

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Arto Aho, Riku Isoaho, Antti Tukiainen, Ville Polojärvi, Marianna Raappana, Timo Aho, Mircea Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

5 Sitaatiot (Scopus)

59 Lataukset (Pure)

Abstrakti

Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

Alkuperäiskieli	Englanti
Otsikko	11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece
Kustantaja	EDP Sciences
DOI - pysyväislinkit	https://doi.org/10.1051/e3sconf/20171603008
Tila	Julkaistu - 2017
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	European Space Power Conference - Kesto: 1 tammik. 2000 → …

Julkaisusarja

Nimi	E3S Web of Conferences
Vuosikerta	16
ISSN (elektroninen)	2267-1242

Conference

Conference	European Space Power Conference
Ajanjakso	1/01/00 → …

Julkaisufoorumi-taso

Jufo-taso 1

Pääsy asiakirjaan

10.1051/e3sconf/20171603008Lisenssi: CC BY

e3sconf_espc2017_03008
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Final published version, 77,3 KBLisenssi: CC BY

http://urn.fi/URN:NBN:fi:tty-201706201606Lisenssi: CC BY

Siteeraa tätä

Aho, A., Isoaho, R., Tukiainen, A., Polojärvi, V., Raappana, M., Aho, T., & Guina, M. (2017). Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE. teoksessa 11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece Artikkeli 03008 (E3S Web of Conferences; Vuosikerta 16). EDP Sciences. https://doi.org/10.1051/e3sconf/20171603008

@inproceedings{b314998da6314d7c9e253288f309dc74,

title = "Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE",

abstract = "Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.",

author = "Arto Aho and Riku Isoaho and Antti Tukiainen and Ville Poloj{\"a}rvi and Marianna Raappana and Timo Aho and Mircea Guina",

year = "2017",

doi = "10.1051/e3sconf/20171603008",

language = "English",

series = "E3S Web of Conferences",

publisher = "EDP Sciences",

booktitle = "11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece",

address = "France",

note = "European Space Power Conference ; Conference date: 01-01-2000",

}

Aho, A, Isoaho, R , Tukiainen, A, Polojärvi, V, Raappana, M, Aho, T & Guina, M 2017, Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE. julkaisussa 11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece., 03008, E3S Web of Conferences, Vuosikerta 16, EDP Sciences, European Space Power Conference, 1/01/00. https://doi.org/10.1051/e3sconf/20171603008

TY - GEN

T1 - Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

AU - Aho, Arto

AU - Isoaho, Riku

AU - Tukiainen, Antti

AU - Polojärvi, Ville

AU - Raappana, Marianna

AU - Aho, Timo

AU - Guina, Mircea

PY - 2017

Y1 - 2017

N2 - Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

AB - Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

U2 - 10.1051/e3sconf/20171603008

DO - 10.1051/e3sconf/20171603008

M3 - Conference contribution

T3 - E3S Web of Conferences

BT - 11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece

PB - EDP Sciences

T2 - European Space Power Conference

Y2 - 1 January 2000

ER -

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Abstrakti

Julkaisusarja

Conference

Julkaisufoorumi-taso

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä