Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

    Tutkimustuotos: KonferenssiartikkeliScientificvertaisarvioitu

    3 Sitaatiot (Scopus)
    49 Lataukset (Pure)

    Abstrakti

    Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.
    AlkuperäiskieliEnglanti
    Otsikko11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece
    KustantajaEDP Sciences
    DOI - pysyväislinkit
    TilaJulkaistu - 2017
    OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
    TapahtumaEuropean Space Power Conference -
    Kesto: 1 tammik. 2000 → …

    Julkaisusarja

    NimiE3S Web of Conferences
    Vuosikerta16
    ISSN (elektroninen)2267-1242

    Conference

    ConferenceEuropean Space Power Conference
    Ajanjakso1/01/00 → …

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