Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

L. Toikkanen; T. Leinonen; A. Tukiainen; S. Viitala; M. Pessa

Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

Julkaisun otsikon käännös: Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

L. Toikkanen, T. Leinonen, A. Tukiainen, S. Viitala, M. Pessa

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

5 Sitaatiot (Scopus)

Julkaisun otsikon käännös	Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation
Alkuperäiskieli	Englanti
Sivut	410-419
Julkaisu	Journal of Crystal Growth
Vuosikerta	265
Tila	Julkaistu - 2004
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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@article{6a14e0b727bd4c769879750261e81295,

title = "Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation",

author = "L. Toikkanen and T. Leinonen and A. Tukiainen and S. Viitala and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2004",

language = "English",

volume = "265",

pages = "410--419",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation. / Toikkanen, L.; Leinonen, T.; Tukiainen, A. et al.
julkaisussa: Journal of Crystal Growth, Vuosikerta 265, 2004, s. 410-419.

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

TY - JOUR

T1 - Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

AU - Toikkanen, L.

AU - Leinonen, T.

AU - Tukiainen, A.

AU - Viitala, S.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2004

Y1 - 2004

M3 - Article

SN - 0022-0248

VL - 265

SP - 410

EP - 419

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -