Q-switched Nd:YVO4 microchip laser emitting 204 ps pulses at 1.34 µm

Jari Nikkinen; Ville-Markus Korpijärvi; Iiro Leino; Antti Härkönen; Mircea Guina

Q-switched Nd:YVO4 microchip laser emitting 204 ps pulses at 1.34 µm

Jari Nikkinen, Ville-Markus Korpijärvi, Iiro Leino, Antti Härkönen, Mircea Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

We report a pulsed 1.34 µm Nd:YVO4 microchip laser Q-switched with a GaInNAs/GaAs semiconductor saturable absorber mirror. Output power of 24 mW at a repetition rate of 2.3 MHz and pulse duration of 204 ps was achieved, which is to our knowledge, the first demonstration of a 1.34 µm microchip laser utilizing this type of quantum well absorber.

Alkuperäiskieli	Englanti
Otsikko	Northern Optics & Photonics 2015
Alaotsikko	June 2-4, 2015, Lappeenranta, Finland
Kustantaja	University of Eastern Finland
ISBN (elektroninen)	978-952-61-1751-5
Tila	Julkaistu - 2 kesäk. 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Northern Optics and Photonics - Lappeenranta, Suomi Kesto: 2 kesäk. 2015 → 4 kesäk. 2015

Conference

Conference	Northern Optics and Photonics
Maa/Alue	Suomi
Kaupunki	Lappeenranta
Ajanjakso	2/06/15 → 4/06/15

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title = "Q-switched Nd:YVO4 microchip laser emitting 204 ps pulses at 1.34 µm",

abstract = "We report a pulsed 1.34 µm Nd:YVO4 microchip laser Q-switched with a GaInNAs/GaAs semiconductor saturable absorber mirror. Output power of 24 mW at a repetition rate of 2.3 MHz and pulse duration of 204 ps was achieved, which is to our knowledge, the first demonstration of a 1.34 µm microchip laser utilizing this type of quantum well absorber. ",

author = "Jari Nikkinen and Ville-Markus Korpij{\"a}rvi and Iiro Leino and Antti H{\"a}rk{\"o}nen and Mircea Guina",

year = "2015",

month = jun,

day = "2",

language = "English",

booktitle = "Northern Optics & Photonics 2015",

publisher = "University of Eastern Finland",

note = "Northern Optics and Photonics ; Conference date: 02-06-2015 Through 04-06-2015",

}

TY - GEN

T1 - Q-switched Nd:YVO4 microchip laser emitting 204 ps pulses at 1.34 µm

AU - Nikkinen, Jari

AU - Korpijärvi, Ville-Markus

AU - Leino, Iiro

AU - Härkönen, Antti

AU - Guina, Mircea

PY - 2015/6/2

Y1 - 2015/6/2

N2 - We report a pulsed 1.34 µm Nd:YVO4 microchip laser Q-switched with a GaInNAs/GaAs semiconductor saturable absorber mirror. Output power of 24 mW at a repetition rate of 2.3 MHz and pulse duration of 204 ps was achieved, which is to our knowledge, the first demonstration of a 1.34 µm microchip laser utilizing this type of quantum well absorber.

AB - We report a pulsed 1.34 µm Nd:YVO4 microchip laser Q-switched with a GaInNAs/GaAs semiconductor saturable absorber mirror. Output power of 24 mW at a repetition rate of 2.3 MHz and pulse duration of 204 ps was achieved, which is to our knowledge, the first demonstration of a 1.34 µm microchip laser utilizing this type of quantum well absorber.

M3 - Conference contribution

BT - Northern Optics & Photonics 2015

PB - University of Eastern Finland

T2 - Northern Optics and Photonics

Y2 - 2 June 2015 through 4 June 2015

ER -

Q-switched Nd:YVO4 microchip laser emitting 204 ps pulses at 1.34 µm

Abstrakti

Conference

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