Quantum-well Laser Emitting at 1.2 μm-1.3 μm Window Monolithically Integrated on Ge Substrate

Mircea Guina; Riku Isoaho; Jukka Viheriälä; Arto Aho; Antti Aho; Antti Tukiainen

doi:10.1109/ECOC.2017.8345837

Quantum-well Laser Emitting at 1.2 μm-1.3 μm Window Monolithically Integrated on Ge Substrate

Mircea Guina, Riku Isoaho, Jukka Viheriälä, Arto Aho, Antti Aho, Antti Tukiainen

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

2 Sitaatiot (Scopus)

Abstrakti

We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1.2 μm-1.3 μm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.

Alkuperäiskieli	Englanti
Otsikko	43rd European Conference on Optical Communication, ECOC 2017
Kustantaja	IEEE
Sivut	1-3
Sivumäärä	3
ISBN (elektroninen)	9781538656242
DOI - pysyväislinkit	https://doi.org/10.1109/ECOC.2017.8345837
Tila	Julkaistu - 24 huhtik. 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION - Kesto: 1 tammik. 1900 → …

Conference

Conference	EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION
Ajanjakso	1/01/00 → …

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Pääsy asiakirjaan

10.1109/ECOC.2017.8345837

Siteeraa tätä

@inproceedings{b6e625e5c453489dac94c103e6fbce22,

title = "Quantum-well Laser Emitting at 1.2 μm-1.3 μm Window Monolithically Integrated on Ge Substrate",

abstract = "We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1.2 μm-1.3 μm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.",

author = "Mircea Guina and Riku Isoaho and Jukka Viheri{\"a}l{\"a} and Arto Aho and Antti Aho and Antti Tukiainen",

year = "2018",

month = apr,

day = "24",

doi = "10.1109/ECOC.2017.8345837",

language = "English",

pages = "1--3",

booktitle = "43rd European Conference on Optical Communication, ECOC 2017",

publisher = "IEEE",

address = "United States",

note = "European Conference on Optical Communication ; Conference date: 01-01-1900",

}

TY - GEN

T1 - Quantum-well Laser Emitting at 1.2 μm-1.3 μm Window Monolithically Integrated on Ge Substrate

AU - Guina, Mircea

AU - Isoaho, Riku

AU - Viheriälä, Jukka

AU - Aho, Arto

AU - Aho, Antti

AU - Tukiainen, Antti

PY - 2018/4/24

Y1 - 2018/4/24

N2 - We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1.2 μm-1.3 μm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.

AB - We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1.2 μm-1.3 μm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.

U2 - 10.1109/ECOC.2017.8345837

DO - 10.1109/ECOC.2017.8345837

M3 - Conference contribution

AN - SCOPUS:85046978554

SP - 1

EP - 3

BT - 43rd European Conference on Optical Communication, ECOC 2017

PB - IEEE

T2 - European Conference on Optical Communication

Y2 - 1 January 1900

ER -

Quantum-well Laser Emitting at 1.2 μm-1.3 μm Window Monolithically Integrated on Ge Substrate

Abstrakti

Conference

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

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