@inproceedings{72ee4734ad2b44308922972f741ec73c,
title = "Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband",
abstract = "Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.",
keywords = "Wafer-fused vertical-external-cavity surface-emitting lasers (VECSELs), wafer-fused gain mirrors, optically pumped VECSELs, photonics technology, SEMICONDUCTOR DISK LASER",
author = "A. Sirbu and A. Rantam{\"a}ki and V. Iakolev and A. Mereuta and A. Caliman and N. Volet and J. Lyytik{\"a}inen and O. Okhotnikov and E. Kapon",
year = "2015",
doi = "10.1117/12.2079752",
language = "English",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "M Guina",
booktitle = "Proceedings of SPIE vol. 8966, 2014.",
address = "United States",
note = "Vertical External Cavity Surface Emitting Lasers ; Conference date: 01-01-2015",
}