Selecting the Right Growth-Plane within GaN Crystal for InGaN-based Yellow-Green or Yellow Lasers by Simulations

Mohammed Nadir

Selecting the Right Growth-Plane within GaN Crystal for InGaN-based Yellow-Green or Yellow Lasers by Simulations

Tutkimustuotos: Abstrakti › Tieteellinen

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2014
OKM-julkaisutyyppi	Ei OKM-tyyppiä
Tapahtuma	14th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices - Kesto: 1 syysk. 2014 → 4 syysk. 2014

Conference

Conference	14th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices
Ajanjakso	1/09/14 → 4/09/14

Siteeraa tätä

@conference{3e8b24e03408488f9070a52dbcca113d,

title = "Selecting the Right Growth-Plane within GaN Crystal for InGaN-based Yellow-Green or Yellow Lasers by Simulations",

author = "Mohammed Nadir",

year = "2014",

language = "English",

note = "14th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices ; Conference date: 01-09-2014 Through 04-09-2014",

}