SiGe/Si Heterostructures Produced by Double-Energy Si+ and Ge+, and Ge+ and Ge2+ Ion Implantations

Julkaisun otsikon käännös: SiGe/Si Heterostructures Produced by Double-Energy Si+ and Ge+, and Ge+ and Ge2+ Ion Implantations

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen

Julkaisun otsikon käännös	SiGe/Si Heterostructures Produced by Double-Energy Si+ and Ge+, and Ge+ and Ge2+ Ion Implantations
Alkuperäiskieli	Englanti
Otsikko	American Vacuum Society, 44th National Symposium, October 20-24, 1997, San Jose Convention Center, San Jose, California, USA
Tila	Julkaistu - 1997
OKM-julkaisutyyppi	B3 Vertaisarvioimaton artikkeli konferenssijulkaisussa

Julkaisufoorumi-taso

@inproceedings{51c56e34fdcc446ba70825bcfd04e831,

title = "SiGe/Si Heterostructures Produced by Double-Energy Si+ and Ge+, and Ge+ and Ge2+ Ion Implantations",

author = "E. Ristolainen",

note = "Contribution: organisation=ele,FACT1=1",

year = "1997",

language = "English",

booktitle = "American Vacuum Society, 44th National Symposium, October 20-24, 1997, San Jose Convention Center, San Jose, California, USA",

}