Simulating the Effects of Crystal Orientation and Polarization in InGaN-GaN based Lasers

Mohammed Nadir

Simulating the Effects of Crystal Orientation and Polarization in InGaN-GaN based Lasers

Tutkimustuotos: Abstrakti › Tieteellinen

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2012
OKM-julkaisutyyppi	Ei OKM-tyyppiä
Tapahtuma	12th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices - Shanghai, Kiina Kesto: 28 elok. 2012 → 31 elok. 2012

Conference

Conference	12th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices
Maa/Alue	Kiina
Kaupunki	Shanghai
Ajanjakso	28/08/12 → 31/08/12

Siteeraa tätä

@conference{81de6e7dc5d54260b89640d4dc40a055,

title = "Simulating the Effects of Crystal Orientation and Polarization in InGaN-GaN based Lasers",

author = "Mohammed Nadir",

year = "2012",

language = "English",

note = "12th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices ; Conference date: 28-08-2012 Through 31-08-2012",

}