Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

    Tutkimustuotos: AbstraktiTieteellinen

    1 Sitaatiot (Scopus)

    Abstrakti

    A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.
    AlkuperäiskieliEnglanti
    DOI - pysyväislinkit
    TilaJulkaistu - 2003
    OKM-julkaisutyyppiEi OKM-tyyppiä
    TapahtumaIEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003 -
    Kesto: 14 lokak. 200316 lokak. 2003

    Conference

    ConferenceIEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003
    Ajanjakso14/10/0316/10/03

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