Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

Mohammed Nadir

doi:10.1109/NUSOD.2003.1259046

Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

Mohammed Nadir

Tutkimustuotos: Muu konferenssimateriaali › Abstrakti › Tieteellinen

1 Sitaatiot (Scopus)

Abstrakti

A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.

Alkuperäiskieli	Englanti
DOI - pysyväislinkit	https://doi.org/10.1109/NUSOD.2003.1259046
Tila	Julkaistu - 2003
OKM-julkaisutyyppi	Ei OKM-tyyppiä
Tapahtuma	IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003 - Kesto: 14 lokak. 2003 → 16 lokak. 2003

Conference

Conference	IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003
Ajanjakso	14/10/03 → 16/10/03

Pääsy asiakirjaan

10.1109/NUSOD.2003.1259046

Siteeraa tätä

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title = "Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells",

abstract = "A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.",

author = "Mohammed Nadir",

year = "2003",

doi = "10.1109/NUSOD.2003.1259046",

language = "English",

note = "IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003 ; Conference date: 14-10-2003 Through 16-10-2003",

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TY - CONF

T1 - Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

AU - Nadir, Mohammed

PY - 2003

Y1 - 2003

N2 - A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.

AB - A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.

U2 - 10.1109/NUSOD.2003.1259046

DO - 10.1109/NUSOD.2003.1259046

M3 - Abstract

T2 - IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003

Y2 - 14 October 2003 through 16 October 2003

ER -

Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

Abstrakti

Conference

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä