Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wells

E. Luna, M. Wu, M. Hanke, J. Puustinen, M. Guina, A. Trampert

    Tutkimustuotos: ArtikkeliScientificvertaisarvioitu

    25 Sitaatiot (Scopus)

    Abstrakti

    In this work, we report on the spontaneous formation of ordered arrays of nanometer-sized Bi-rich structures due to lateral composition modulations in Ga(As,Bi)/GaAs quantum wells grown by molecular beam epitaxy. The overall microstructure and chemical distribution is investigated using transmission electron microscopy. The information is complemented by synchrotron x-ray grazing incidence diffraction, which provides insight into the in-plane arrangement. Due to the vertical inheritance of the lateral modulation, the Bi-rich nanostructures eventually shape into a three-dimensional assembly. Whereas the Bi-rich nanostructures are created via two-dimensional phase separation at the growing surface, our results suggest that the process is assisted by Bi segregation which is demonstrated to be strong and more complex than expected, implying both lateral and vertical (surface segregation) mass transport. As demonstrated here, the inherent thermodynamic miscibility gap of Ga(As,Bi) alloys can be exploited to create highly uniform Bi-rich units embedded in a quantum confinement structure.

    AlkuperäiskieliEnglanti
    Artikkeli325603
    JulkaisuNanotechnology
    Vuosikerta27
    Numero32
    DOI - pysyväislinkit
    TilaJulkaistu - 1 heinäk. 2016
    OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

    Julkaisufoorumi-taso

    • Jufo-taso 2

    !!ASJC Scopus subject areas

    • Bioengineering
    • Chemistry(all)
    • Electrical and Electronic Engineering
    • Mechanical Engineering
    • Mechanics of Materials
    • Materials Science(all)

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