Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy

Julkaisun otsikon käännös: Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy

Sanna Ranta, Teemu Hakkarainen, Miki Tavast, Jukka Lindfors, Tomi Leinonen, Mircea Guina

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

14 Sitaatiot (Scopus)

Julkaisun otsikon käännös	Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy
Alkuperäiskieli	Englanti
Sivut	4-9
Julkaisu	Journal of Crystal Growth
Vuosikerta	335
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1016/j.jcrysgro.2011.08.044
Tila	Julkaistu - 2011
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

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title = "Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy",

author = "Sanna Ranta and Teemu Hakkarainen and Miki Tavast and Jukka Lindfors and Tomi Leinonen and Mircea Guina",

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year = "2011",

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T1 - Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy

AU - Ranta, Sanna

AU - Hakkarainen, Teemu

AU - Tavast, Miki

AU - Lindfors, Jukka

AU - Leinonen, Tomi

AU - Guina, Mircea

N1 - Project Arete<br/>Contribution: organisation=orc,FACT1=1

PY - 2011

Y1 - 2011

U2 - 10.1016/j.jcrysgro.2011.08.044

DO - 10.1016/j.jcrysgro.2011.08.044

M3 - Article

SN - 0022-0248

VL - 335

SP - 4

EP - 9

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -