Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

Julkaisun otsikon käännös: Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

Janne Pakarinen

    Tutkimustuotos: VäitöskirjaCollection of Articles

    141 Lataukset (Pure)

    Abstrakti

    In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.
    Julkaisun otsikon käännösStudies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures
    AlkuperäiskieliEnglanti
    KustantajaTampere University of Technology
    Sivumäärä46
    ISBN (elektroninen)978-952-15-2264-2
    ISBN (painettu)978-952-15-2219-2
    TilaJulkaistu - 25 syysk. 2009
    OKM-julkaisutyyppiG5 Artikkeliväitöskirja

    Julkaisusarja

    NimiTampere University of Technology. Publication
    KustantajaTampere University of Technology
    Vuosikerta830
    ISSN (painettu)1459-2045

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