Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Tyler A. Growden, David F. Storm, Evan M. Cornuelle, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Jason A. Roussos, Nicholas Cronk, Laura B. Ruppalt, James G. Champlain, Paul R. Berger, David J. Meyer

Tutkimustuotos: ArticleScientificvertaisarvioitu

8 Sitaatiot (Scopus)
2 Lataukset (Pure)


We report the direct measurement of record fast switching speeds in GaN/AlN resonant tunneling diodes (RTDs). The devices, grown by plasma-assisted molecular-beam epitaxy, displayed three repeatable negative differential resistance (NDR) regions below a bias of +6 V. A room temperature peak-to-valley current ratio (PVCR) > 2 was observed, which represents a marked improvement over recent reports. Measurements carried out on hundreds of devices, of varying sizes, revealed a yield of ∼90%. Repeatability measurements consisting of 3000 sweeps resulted in a standard deviation, relative to the mean, of < 0.1%. Temperature dependent measurements combined with non-equilibrium Green's function based quantum transport simulations suggest the presence of both three-dimensional (3D) and two-dimensional (2D) emitters, giving rise to three NDR regions. Finally, a valley current density vs perimeter-to-area-ratio study indicates the presence of a surface leakage current mechanism, which reduces the PVCR.

JulkaisuApplied Physics Letters
DOI - pysyväislinkit
TilaJulkaistu - 2020
OKM-julkaisutyyppiA1 Alkuperäisartikkeli


  • Jufo-taso 2

!!ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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