Surface doping of GaxIn1−xAs semiconductor crystals with magnesium

M. Yasir; J. Mäkelä; D. Koiva; M. Tuominen; J. Dahl; J.-P. Lehtiö; M. Kuzmin; Z. Jahanshah Rad; M. Punkkinen; P. Laukkanen; K. Kokko; V. Polojärvi; J. Lyytikäinen; A. Tukiainen; M. Guina

doi:10.1016/j.mtla.2018.05.008

Surface doping of GaxIn1−xAs semiconductor crystals with magnesium

M. Yasir
, J. Mäkelä
, D. Koiva
, M. Tuominen
, J. Dahl
, J.-P. Lehtiö
, M. Kuzmin
, Z. Jahanshah Rad
, M. Punkkinen
, P. Laukkanen
, K. Kokko
, V. Polojärvi
, J. Lyytikäinen
, A. Tukiainen
, M. Guina

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

1 Sitaatiot (Scopus)

Abstrakti

Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.

Alkuperäiskieli	Englanti
Sivut	33-36
Julkaisu	Materialia
Vuosikerta	2
DOI - pysyväislinkit	https://doi.org/10.1016/j.mtla.2018.05.008
Tila	Julkaistu - lokak. 2018
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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10.1016/j.mtla.2018.05.008

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@article{d6e50bd8386146ff9234dbe56eb52a07,

title = "Surface doping of GaxIn1−xAs semiconductor crystals with magnesium",

abstract = "Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.",

keywords = "GaAs, Mg-induced reconstruction, Surface doping, STM, Infrared detector",

author = "M. Yasir and J. M{\"a}kel{\"a} and D. Koiva and M. Tuominen and J. Dahl and J.-P. Lehti{\"o} and M. Kuzmin and Rad, \{Z. Jahanshah\} and M. Punkkinen and P. Laukkanen and K. Kokko and V. Poloj{\"a}rvi and J. Lyytik{\"a}inen and A. Tukiainen and M. Guina",

note = "EXT={"}M{\"a}kel{\"a}, J.{"} EXT={"}Tuominen, M.{"} EXT={"}Kuzmin, M.{"} EXT={"}Laukkanen, P.{"} EXT={"}Kokko, K.{"} ",

year = "2018",

month = oct,

doi = "10.1016/j.mtla.2018.05.008",

language = "English",

volume = "2",

pages = "33--36",

journal = "Materialia",

issn = "2589-1529",

publisher = "Elsevier",

}

TY - JOUR

T1 - Surface doping of GaxIn1−xAs semiconductor crystals with magnesium

AU - Yasir, M.

AU - Mäkelä, J.

AU - Koiva, D.

AU - Tuominen, M.

AU - Dahl, J.

AU - Lehtiö, J.-P.

AU - Kuzmin, M.

AU - Rad, Z. Jahanshah

AU - Punkkinen, M.

AU - Laukkanen, P.

AU - Kokko, K.

AU - Polojärvi, V.

AU - Lyytikäinen, J.

AU - Tukiainen, A.

AU - Guina, M.

N1 - EXT="Mäkelä, J." EXT="Tuominen, M." EXT="Kuzmin, M." EXT="Laukkanen, P." EXT="Kokko, K."

PY - 2018/10

Y1 - 2018/10

N2 - Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.

AB - Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.

KW - GaAs, Mg-induced reconstruction, Surface doping, STM, Infrared detector

U2 - 10.1016/j.mtla.2018.05.008

DO - 10.1016/j.mtla.2018.05.008

M3 - Article

SN - 2589-1529

VL - 2

SP - 33

EP - 36

JO - Materialia

JF - Materialia

ER -

Surface doping of GaxIn1−xAs semiconductor crystals with magnesium

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