Surface photovoltage study of GalnNAs layers for photovoltaic applications

V. Donchev; S. Georgiev; A. Aho; M. Guina

doi:10.1088/1742-6596/1186/1/012003

Surface photovoltage study of GalnNAs layers for photovoltaic applications

V. Donchev
, S. Georgiev
, A. Aho
, M. Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

2 Sitaatiot (Scopus)

49 Lataukset (Pure)

Abstrakti

The optical and carrier transport properties of GaInNAs layers grown by molecular beam epitaxy on n-GaAs substrates are studied by surface photovoltage (SPV) spectroscopy combined with photoluminescence (PL) measurements data. The SPV spectra clearly show a red shift of the band gap energy with respect to the band gap of GaAs, which is in line with the PL results. The combined analysis of the SPV amplitude and phase spectra has allowed determining the residual doping type in the layer. The minority carrier diffusion length was assessed by means of the method called "constant SPV".

Alkuperäiskieli	Englanti
Otsikko	20th International School on Condensed Matter Physics 3–6 September 2018, Varna, Bulgaria
Kustantaja	IOP Publishing
DOI - pysyväislinkit	https://doi.org/10.1088/1742-6596/1186/1/012003
Tila	Julkaistu - 2019
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Jubilee International School on Condensed Matter Physics: Physics and Applications of Advanced and Multifunctional Materials - Varna, Bulgaria Kesto: 3 syysk. 2018 → 7 syysk. 2018

Julkaisusarja

Nimi	Journal of Physics: Conference Series
Kustantaja	IOP Publishing
Vuosikerta	1186
ISSN (painettu)	1742-6588

Conference

Conference	Jubilee International School on Condensed Matter Physics: Physics and Applications of Advanced and Multifunctional Materials
Maa/Alue	Bulgaria
Kaupunki	Varna
Ajanjakso	3/09/18 → 7/09/18

Rahoitus

This work was supported by the Cost Action MP1406 “Multiscale in modelling and validation for solar photovoltaics (MultiscaleSolar)”, the Bulgarian National Science Fund (contract ДКOCT 01/16) and the European Regional Development Fund within the Operational Programme “Science and Education for Smart Growth 2014 - 2020” under the Project CoE “National center of mechatronics and clean technologies“ BG05M2OP001-1.001-0008-С01.

YK:n kestävän kehityksen tavoitteet

Tämä tuotos edistää seuraavia kestävän kehityksen tavoitteita:

SDG 7 – Edullinen ja puhdas energia

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Yleinen fysiikka ja tähtitiede

Pääsy asiakirjaan

10.1088/1742-6596/1186/1/012003Lisenssi: CC BY

Donchev_2019_J._Phys.__Conf._Ser._1186_012003
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. http://creativecommons.org/licenses/by/3.0
Final published version, 1,01 MBLisenssi: CC BY

http://urn.fi/URN:NBN:fi:tty-201906261914Lisenssi: CC BY

Siteeraa tätä

@inproceedings{428eee89f4154bf18be9c191423212ae,

title = "Surface photovoltage study of GalnNAs layers for photovoltaic applications",

abstract = "The optical and carrier transport properties of GaInNAs layers grown by molecular beam epitaxy on n-GaAs substrates are studied by surface photovoltage (SPV) spectroscopy combined with photoluminescence (PL) measurements data. The SPV spectra clearly show a red shift of the band gap energy with respect to the band gap of GaAs, which is in line with the PL results. The combined analysis of the SPV amplitude and phase spectra has allowed determining the residual doping type in the layer. The minority carrier diffusion length was assessed by means of the method called {"}constant SPV{"}.",

author = "V. Donchev and S. Georgiev and A. Aho and M. Guina",

note = "jufoid=71018; Jubilee International School on Condensed Matter Physics: Physics and Applications of Advanced and Multifunctional Materials ; Conference date: 03-09-2018 Through 07-09-2018",

year = "2019",

doi = "10.1088/1742-6596/1186/1/012003",

language = "English",

series = "Journal of Physics: Conference Series",

publisher = "IOP Publishing",

booktitle = "20th International School on Condensed Matter Physics 3{\textendash}6 September 2018, Varna, Bulgaria",

}

Donchev, V, Georgiev, S, Aho, A & Guina, M 2019, Surface photovoltage study of GalnNAs layers for photovoltaic applications. julkaisussa 20th International School on Condensed Matter Physics 3–6 September 2018, Varna, Bulgaria. Journal of Physics: Conference Series, Vuosikerta 1186, IOP Publishing, Jubilee International School on Condensed Matter Physics: Physics and Applications of Advanced and Multifunctional Materials, Varna, Bulgaria, 3/09/18. https://doi.org/10.1088/1742-6596/1186/1/012003

TY - GEN

T1 - Surface photovoltage study of GalnNAs layers for photovoltaic applications

AU - Donchev, V.

AU - Georgiev, S.

AU - Aho, A.

AU - Guina, M.

N1 - jufoid=71018

PY - 2019

Y1 - 2019

N2 - The optical and carrier transport properties of GaInNAs layers grown by molecular beam epitaxy on n-GaAs substrates are studied by surface photovoltage (SPV) spectroscopy combined with photoluminescence (PL) measurements data. The SPV spectra clearly show a red shift of the band gap energy with respect to the band gap of GaAs, which is in line with the PL results. The combined analysis of the SPV amplitude and phase spectra has allowed determining the residual doping type in the layer. The minority carrier diffusion length was assessed by means of the method called "constant SPV".

AB - The optical and carrier transport properties of GaInNAs layers grown by molecular beam epitaxy on n-GaAs substrates are studied by surface photovoltage (SPV) spectroscopy combined with photoluminescence (PL) measurements data. The SPV spectra clearly show a red shift of the band gap energy with respect to the band gap of GaAs, which is in line with the PL results. The combined analysis of the SPV amplitude and phase spectra has allowed determining the residual doping type in the layer. The minority carrier diffusion length was assessed by means of the method called "constant SPV".

U2 - 10.1088/1742-6596/1186/1/012003

DO - 10.1088/1742-6596/1186/1/012003

M3 - Conference contribution

AN - SCOPUS:85064919755

T3 - Journal of Physics: Conference Series

BT - 20th International School on Condensed Matter Physics 3–6 September 2018, Varna, Bulgaria

PB - IOP Publishing

T2 - Jubilee International School on Condensed Matter Physics: Physics and Applications of Advanced and Multifunctional Materials

Y2 - 3 September 2018 through 7 September 2018

ER -

Surface photovoltage study of GalnNAs layers for photovoltaic applications

Abstrakti

Julkaisusarja

Conference

Rahoitus

YK:n kestävän kehityksen tavoitteet

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä