Te-doping of self-catalyzed GaAs nanowires

S. Suomalainen; T. V. Hakkarainen; T. Salminen; R. Koskinen; M. Honkanen; E. Luna; M. Guina

doi:10.1063/1.4926494

Te-doping of self-catalyzed GaAs nanowires

S. Suomalainen, T. V. Hakkarainen, T. Salminen, R. Koskinen, M. Honkanen, E. Luna, M. Guina

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

26 Sitaatiot (Scopus)

Abstrakti

Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the {111}-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.

Alkuperäiskieli	Englanti
Artikkeli	012101
Julkaisu	Applied Physics Letters
Vuosikerta	107
DOI - pysyväislinkit	https://doi.org/10.1063/1.4926494
Tila	Julkaistu - 2015
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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Jufo-taso 2

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10.1063/1.4926494

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title = "Te-doping of self-catalyzed GaAs nanowires",

abstract = "Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the {111}-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.",

author = "S. Suomalainen and Hakkarainen, {T. V.} and T. Salminen and R. Koskinen and M. Honkanen and E. Luna and M. Guina",

note = "ORG=orc,0.85 ORG=mol,0.15",

year = "2015",

doi = "10.1063/1.4926494",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Te-doping of self-catalyzed GaAs nanowires

AU - Suomalainen, S.

AU - Hakkarainen, T. V.

AU - Salminen, T.

AU - Koskinen, R.

AU - Honkanen, M.

AU - Luna, E.

AU - Guina, M.

N1 - ORG=orc,0.85 ORG=mol,0.15

PY - 2015

Y1 - 2015

N2 - Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the {111}-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.

AB - Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the {111}-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.

U2 - 10.1063/1.4926494

DO - 10.1063/1.4926494

M3 - Article

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 012101

ER -

Te-doping of self-catalyzed GaAs nanowires

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