Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

Arto Aho; Riku Isoaho; Antti Tukiainen; Ville Polojärvi; Timo Aho; Marianna Raappana; Mircea Guina

doi:10.1063/1.4931522

Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

Arto Aho, Riku Isoaho, Antti Tukiainen, Ville Polojärvi, Timo Aho, Marianna Raappana, Mircea Guina

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

20 Sitaatiot (Scopus)

Abstrakti

We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37-39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be-7.5mV/°C, 0.040mA/cm2/°C, and-0.09%/°C, respectively.

Alkuperäiskieli	Englanti
Artikkeli	050001
Julkaisu	AIP Conference Proceedings
Vuosikerta	1679
DOI - pysyväislinkit	https://doi.org/10.1063/1.4931522
Tila	Julkaistu - 2015
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

Pääsy asiakirjaan

10.1063/1.4931522

Siteeraa tätä

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title = "Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells",

abstract = "We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37-39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be-7.5mV/°C, 0.040mA/cm2/°C, and-0.09%/°C, respectively.",

author = "Arto Aho and Riku Isoaho and Antti Tukiainen and Ville Poloj{\"a}rvi and Timo Aho and Marianna Raappana and Mircea Guina",

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year = "2015",

doi = "10.1063/1.4931522",

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journal = "AIP Conference Proceedings",

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TY - JOUR

T1 - Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

AU - Aho, Arto

AU - Isoaho, Riku

AU - Tukiainen, Antti

AU - Polojärvi, Ville

AU - Aho, Timo

AU - Raappana, Marianna

AU - Guina, Mircea

N1 - AUX=orc,"Isoaho, Riku"

PY - 2015

Y1 - 2015

N2 - We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37-39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be-7.5mV/°C, 0.040mA/cm2/°C, and-0.09%/°C, respectively.

AB - We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37-39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be-7.5mV/°C, 0.040mA/cm2/°C, and-0.09%/°C, respectively.

U2 - 10.1063/1.4931522

DO - 10.1063/1.4931522

M3 - Article

SN - 0094-243X

VL - 1679

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

M1 - 050001

ER -

Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

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