Temperature Dependent Characteristics of GaInP/GaAs/GaInNAsSb Solar Cell Under Simulated AM0 Spectra

We report on the temperature characteristics of GaInP/GaAs/GaInNAsSb triple junction solar cell monolithically grown by molecular beam epitaxy. We have measured the temperature dependent light-biased current-voltage characteristics for simulated AM0 spectral conditions using two simulators: a customized three band source and a Xenon lamp with AM0 filter. The current-voltage characteristics of the cell were measured in temperature range of 25-90°C with both solar simulators. At 25°C the cell demonstrated active area efficiencies of 26.7% and 21.1% when illuminated with the three band simulator and Xenon source, respectively. Significant deviations between the measurements were observed as the cell demonstrated approximately 30% lower short-circuit current density when illuminated with the Xenon source compared to the measurement made with the three band simulator. The temperature coefficients for the cell characteristics were determined from the temperature dependent current-voltage data. For the three band simulator, the temperature coefficients for short-circuit current density and open-circuit voltage of the cell were found to be 5.3 µA/cm2/°C and -6.8 mV/°C, respectively, and are in agreement with results reported for GaInP/GaAs/Ge solar cells. Illumination with filtered Xenon lamp leads to significantly higher temperature coefficient for short-circuit current density. The conversion efficiency of the cell decreased with a slope of -0.068 abs.-%/°C when illuminated with the three band simulator.