Temperature dependent characteristics of GaInP/GaAs/GaInNAsSb solar cell under simulated AM0 spectra

Riku Isoaho; Arto Aho; Antti Tukiainen; Mircea Guina

doi:10.1109/PVSC.2017.8366645

Temperature dependent characteristics of GaInP/GaAs/GaInNAsSb solar cell under simulated AM0 spectra

Riku Isoaho, Arto Aho, Antti Tukiainen, Mircea Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

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Abstrakti

We report on the temperature characteristics of GaInP/GaAs/GaInNAsSb triple junction solar cell monolithically grown by molecular beam epitaxy. In particular, we have compared the temperature dependent light-biased current-voltage characteristics of the cell at simulated AM0 spectral conditions produced by two solar simulators: a customized three band solar simulator and a Xenon simulator equipped with an AM0 filter. For the three band simulator, the temperature coefficients corresponding to short-circuit current density and open-circuit voltage were found to be 5.3 μA/cm 2 /°C and -6.8 mV/°C, respectively. These values are in agreement with literature reports for GaInP/GaAs/Ge solar cells. Illumination using a filtered single Xenon lamp leads to an erroneously high temperature coefficient value for short-circuit current density.

Alkuperäiskieli	Englanti
Otsikko	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
Kustantaja	IEEE
Sivut	2520-2523
Sivumäärä	4
ISBN (elektroninen)	978-1-5090-5605-7
DOI - pysyväislinkit	https://doi.org/10.1109/PVSC.2017.8366645
Tila	Julkaistu - 5 marrask. 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	IEEE Photovoltaic Specialists Conference - , Iso-Britannia Kesto: 1 tammik. 2000 → …

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ISSN (painettu)	0160-8371

Conference

Conference	IEEE Photovoltaic Specialists Conference
Maa/Alue	Iso-Britannia
Ajanjakso	1/01/00 → …

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10.1109/PVSC.2017.8366645

IEEE_PVSC-44_2017_ Isoaho_final
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Accepted author manuscript, 583 KB

1 Abstrakti

Temperature Dependent Characteristics of GaInP/GaAs/GaInNAsSb Solar Cell Under Simulated AM0 Spectra
Isoaho, R., Aho, A., Tukiainen, A. & Guina, M., 2017.
Tutkimustuotos: Abstrakti › Tieteellinen

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@inproceedings{f41ccd8a3ff34bd7bf201c2cd4290f6a,

title = "Temperature dependent characteristics of GaInP/GaAs/GaInNAsSb solar cell under simulated AM0 spectra",

abstract = "We report on the temperature characteristics of GaInP/GaAs/GaInNAsSb triple junction solar cell monolithically grown by molecular beam epitaxy. In particular, we have compared the temperature dependent light-biased current-voltage characteristics of the cell at simulated AM0 spectral conditions produced by two solar simulators: a customized three band solar simulator and a Xenon simulator equipped with an AM0 filter. For the three band simulator, the temperature coefficients corresponding to short-circuit current density and open-circuit voltage were found to be 5.3 μA/cm 2 /°C and -6.8 mV/°C, respectively. These values are in agreement with literature reports for GaInP/GaAs/Ge solar cells. Illumination using a filtered single Xenon lamp leads to an erroneously high temperature coefficient value for short-circuit current density.",

author = "Riku Isoaho and Arto Aho and Antti Tukiainen and Mircea Guina",

year = "2018",

month = nov,

day = "5",

doi = "10.1109/PVSC.2017.8366645",

language = "English",

publisher = "IEEE",

pages = "2520--2523",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference ; Conference date: 01-01-2000",

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TY - GEN

T1 - Temperature dependent characteristics of GaInP/GaAs/GaInNAsSb solar cell under simulated AM0 spectra

AU - Isoaho, Riku

AU - Aho, Arto

AU - Tukiainen, Antti

AU - Guina, Mircea

PY - 2018/11/5

Y1 - 2018/11/5

N2 - We report on the temperature characteristics of GaInP/GaAs/GaInNAsSb triple junction solar cell monolithically grown by molecular beam epitaxy. In particular, we have compared the temperature dependent light-biased current-voltage characteristics of the cell at simulated AM0 spectral conditions produced by two solar simulators: a customized three band solar simulator and a Xenon simulator equipped with an AM0 filter. For the three band simulator, the temperature coefficients corresponding to short-circuit current density and open-circuit voltage were found to be 5.3 μA/cm 2 /°C and -6.8 mV/°C, respectively. These values are in agreement with literature reports for GaInP/GaAs/Ge solar cells. Illumination using a filtered single Xenon lamp leads to an erroneously high temperature coefficient value for short-circuit current density.

AB - We report on the temperature characteristics of GaInP/GaAs/GaInNAsSb triple junction solar cell monolithically grown by molecular beam epitaxy. In particular, we have compared the temperature dependent light-biased current-voltage characteristics of the cell at simulated AM0 spectral conditions produced by two solar simulators: a customized three band solar simulator and a Xenon simulator equipped with an AM0 filter. For the three band simulator, the temperature coefficients corresponding to short-circuit current density and open-circuit voltage were found to be 5.3 μA/cm 2 /°C and -6.8 mV/°C, respectively. These values are in agreement with literature reports for GaInP/GaAs/Ge solar cells. Illumination using a filtered single Xenon lamp leads to an erroneously high temperature coefficient value for short-circuit current density.

U2 - 10.1109/PVSC.2017.8366645

DO - 10.1109/PVSC.2017.8366645

M3 - Conference contribution

SP - 2520

EP - 2523

BT - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

PB - IEEE

T2 - IEEE Photovoltaic Specialists Conference

Y2 - 1 January 2000

ER -

Temperature dependent characteristics of GaInP/GaAs/GaInNAsSb solar cell under simulated AM0 spectra

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Temperature Dependent Characteristics of GaInP/GaAs/GaInNAsSb Solar Cell Under Simulated AM0 Spectra

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