The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells

J. Pakarinen; C.S. Peng; V. Polojärvi; P. Laukkanen; A. Tukiainen; V.-M. Korpijärvi; J. Puustinen; E. Arola; M. Pessa

The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells

Julkaisun otsikon käännös: The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells

J. Pakarinen
, C.S. Peng
, V. Polojärvi
, P. Laukkanen
, A. Tukiainen
, V.-M. Korpijärvi
, J. Puustinen
, E. Arola
, M. Pessa

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen

Julkaisun otsikon käännös	The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells
Alkuperäiskieli	Englanti
Otsikko	Proceedings of the Annual Conference of the Finnish Physical Society, 27-29 March, 2008, Turku, Finland. Åbo Akademi University. Report series in physics
Toimittajat	O. Kärki
Sivut	p. 112
Sivumäärä	1
Tila	Julkaistu - 2008
OKM-julkaisutyyppi	B3 Vertaisarvioimaton artikkeli konferenssijulkaisussa

Julkaisufoorumi-taso

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Siteeraa tätä

Pakarinen, J., Peng, C. S., Polojärvi, V., Laukkanen, P., Tukiainen, A., Korpijärvi, V.-M., Puustinen, J., Arola, E., & Pessa, M. (2008). The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells. teoksessa O. Kärki (Toimittaja), Proceedings of the Annual Conference of the Finnish Physical Society, 27-29 March, 2008, Turku, Finland. Åbo Akademi University. Report series in physics (Sivut p. 112)

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title = "The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells",

author = "J. Pakarinen and C.S. Peng and V. Poloj{\"a}rvi and P. Laukkanen and A. Tukiainen and V.-M. Korpij{\"a}rvi and J. Puustinen and E. Arola and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1<br/>Contribution: organisation=fys,FACT2=0",

year = "2008",

language = "English",

isbn = "978-951-29-3515-4",

pages = "p. 112",

editor = "O. K{\"a}rki",

booktitle = "Proceedings of the Annual Conference of the Finnish Physical Society, 27-29 March, 2008, Turku, Finland. {\AA}bo Akademi University. Report series in physics",

}

Pakarinen, J, Peng, CS, Polojärvi, V, Laukkanen, P, Tukiainen, A, Korpijärvi, V-M, Puustinen, J, Arola, E & Pessa, M 2008, The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells. julkaisussa O Kärki (Toimittaja), Proceedings of the Annual Conference of the Finnish Physical Society, 27-29 March, 2008, Turku, Finland. Åbo Akademi University. Report series in physics. Sivut p. 112.

The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells. / Pakarinen, J.; Peng, C.S.; Polojärvi, V. et al.
Proceedings of the Annual Conference of the Finnish Physical Society, 27-29 March, 2008, Turku, Finland. Åbo Akademi University. Report series in physics. toim. / O. Kärki. 2008. s. p. 112.

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen

TY - GEN

T1 - The effect of annealing on highly Be-doped InGaAsN / GaAs single quantum wells

AU - Pakarinen, J.

AU - Peng, C.S.

AU - Polojärvi, V.

AU - Laukkanen, P.

AU - Tukiainen, A.

AU - Korpijärvi, V.-M.

AU - Puustinen, J.

AU - Arola, E.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1<br/>Contribution: organisation=fys,FACT2=0

PY - 2008

Y1 - 2008

M3 - Conference contribution

SN - 978-951-29-3515-4

SP - p. 112

BT - Proceedings of the Annual Conference of the Finnish Physical Society, 27-29 March, 2008, Turku, Finland. Åbo Akademi University. Report series in physics

A2 - Kärki, O.

ER -