Titanium Nitride Microelectrodes Deposited by Ion Beam Assisted E-beam Evaporation

Tomi Ryynänen; Maria Koivisto; Susanna Narkilahti; Jukka  Lekkala

doi:10.3389/conf.fnins.2016.93.00123

Abstrakti

An alternative method for fabricating titanium nitride (TiN) microelectrodes is presented. In order to decrease the impedance and noise levels of microelectrodes, one of the most common methods is to coat the electrodes with TiN. Usually that has required the use of a sputtering device, but we have demonstrated that also an e-beam coater can be used for TiN deposition, if equipped with an ion source. Our first 30 µm microelectrodes fabricated by ion beam assisted deposition (IBAD) have impedances around 75 kΩ, which is close to the impedances reported for sputter deposited TiN microelectrodes.

Alkuperäiskieli	Englanti
DOI - pysyväislinkit	https://doi.org/10.3389/conf.fnins.2016.93.00123
Tila	Julkaistu - 24 kesäk. 2016
OKM-julkaisutyyppi	Ei OKM-tyyppiä
Tapahtuma	MEA meeting 2016 - Kesto: 28 kesäk. 2016 → 1 heinäk. 2016 http://www.nmi.de/meameeting/

Conference

Conference	MEA meeting 2016
Ajanjakso	28/06/16 → 1/07/16
www-osoite	http://www.nmi.de/meameeting/

Julkaisufoorumi-taso

Ei tasoa

Pääsy asiakirjaan

10.3389/conf.fnins.2016.93.00123

Siteeraa tätä

@conference{a6effbaf3bde4130b8a2d5034cb86120,

title = "Titanium Nitride Microelectrodes Deposited by Ion Beam Assisted E-beam Evaporation",

abstract = "An alternative method for fabricating titanium nitride (TiN) microelectrodes is presented. In order to decrease the impedance and noise levels of microelectrodes, one of the most common methods is to coat the electrodes with TiN. Usually that has required the use of a sputtering device, but we have demonstrated that also an e-beam coater can be used for TiN deposition, if equipped with an ion source. Our first 30 µm microelectrodes fabricated by ion beam assisted deposition (IBAD) have impedances around 75 kΩ, which is close to the impedances reported for sputter deposited TiN microelectrodes.",

keywords = "microelectrode, Titanium nitride, e-Beam evaporation, Ion beam assisted deposition, MEA ",

author = "Tomi Ryyn{\"a}nen and Maria Koivisto and Susanna Narkilahti and Jukka Lekkala",

year = "2016",

month = jun,

day = "24",

doi = "10.3389/conf.fnins.2016.93.00123",

language = "English",

note = "MEA meeting 2016 ; Conference date: 28-06-2016 Through 01-07-2016",

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TY - CONF

T1 - Titanium Nitride Microelectrodes Deposited by Ion Beam Assisted E-beam Evaporation

AU - Ryynänen, Tomi

AU - Koivisto, Maria

AU - Narkilahti, Susanna

AU - Lekkala, Jukka

PY - 2016/6/24

Y1 - 2016/6/24

N2 - An alternative method for fabricating titanium nitride (TiN) microelectrodes is presented. In order to decrease the impedance and noise levels of microelectrodes, one of the most common methods is to coat the electrodes with TiN. Usually that has required the use of a sputtering device, but we have demonstrated that also an e-beam coater can be used for TiN deposition, if equipped with an ion source. Our first 30 µm microelectrodes fabricated by ion beam assisted deposition (IBAD) have impedances around 75 kΩ, which is close to the impedances reported for sputter deposited TiN microelectrodes.

AB - An alternative method for fabricating titanium nitride (TiN) microelectrodes is presented. In order to decrease the impedance and noise levels of microelectrodes, one of the most common methods is to coat the electrodes with TiN. Usually that has required the use of a sputtering device, but we have demonstrated that also an e-beam coater can be used for TiN deposition, if equipped with an ion source. Our first 30 µm microelectrodes fabricated by ion beam assisted deposition (IBAD) have impedances around 75 kΩ, which is close to the impedances reported for sputter deposited TiN microelectrodes.

KW - microelectrode

KW - Titanium nitride

KW - e-Beam evaporation

KW - Ion beam assisted deposition

KW - MEA

U2 - 10.3389/conf.fnins.2016.93.00123

DO - 10.3389/conf.fnins.2016.93.00123

M3 - Abstract

T2 - MEA meeting 2016

Y2 - 28 June 2016 through 1 July 2016