Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

Niu Jin, Sung Yong Chung, Roux M. Heyns, Paul R. Berger, Ronghua Yu, Phillip E. Thompson, Sean L. Rommel

Tutkimustuotos: ArticleScientificvertaisarvioitu

50 Sitaatiot (Scopus)

Abstrakti

A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.

AlkuperäiskieliEnglanti
Sivut646-648
Sivumäärä3
JulkaisuIEEE Electron Device Letters
Vuosikerta25
Numero9
DOI - pysyväislinkit
TilaJulkaistu - 2004
Julkaistu ulkoisestiKyllä
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

!!ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Sormenjälki

Sukella tutkimusaiheisiin 'Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR'. Ne muodostavat yhdessä ainutlaatuisen sormenjäljen.

Siteeraa tätä