VECSEL systems for quantum information processing with trapped beryllium ions

S. C. Burd; J. P. Penttinen; P. Y. Hou; H. M. Knaack; S. Ranta; M. Mäki; E. Kantola; M. Guina; D. H. Slichter; D. Leibfried; A. C. Wilson

doi:10.1364/josab.475467

VECSEL systems for quantum information processing with trapped beryllium ions

S. C. Burd, J. P. Penttinen, P. Y. Hou, H. M. Knaack, S. Ranta, M. Mäki, E. Kantola, M. Guina, D. H. Slichter, D. Leibfried, A. C. Wilson

Fysiikka

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

8 Sitaatiot (Scopus)

Abstrakti

We demonstrate two systems based on vertical-external-cavity surface-emitting lasers (VECSELs) for producing ultraviolet laser light at wavelengths of 235 and 313 nm. The systems are suitable for quantum information processing with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers.One system generates 2.4W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a gain mirror based onGaInNAs/GaAs quantum wells, enabling wavelength extension above 1200 nm with manageable strain in the GaAs lattice. This system generates 1.6Wat 1252 nm, which is converted to 41mWof 313 nm light that is used to laser cool trapped 9Be+ ions and quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates.

Alkuperäiskieli	Englanti
Sivut	773-781
Sivumäärä	9
Julkaisu	Journal of the Optical Society of America B: Optical Physics
Vuosikerta	40
Numero	4
DOI - pysyväislinkit	https://doi.org/10.1364/josab.475467
Tila	Julkaistu - huhtik. 2023
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Statistical and Nonlinear Physics
Atomic and Molecular Physics, and Optics

Pääsy asiakirjaan

10.1364/josab.475467

Siteeraa tätä

@article{19a86d25be1d40e2b198396230a0502d,

title = "VECSEL systems for quantum information processing with trapped beryllium ions",

abstract = "We demonstrate two systems based on vertical-external-cavity surface-emitting lasers (VECSELs) for producing ultraviolet laser light at wavelengths of 235 and 313 nm. The systems are suitable for quantum information processing with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers.One system generates 2.4W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a gain mirror based onGaInNAs/GaAs quantum wells, enabling wavelength extension above 1200 nm with manageable strain in the GaAs lattice. This system generates 1.6Wat 1252 nm, which is converted to 41mWof 313 nm light that is used to laser cool trapped 9Be+ ions and quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates.",

author = "Burd, {S. C.} and Penttinen, {J. P.} and Hou, {P. Y.} and Knaack, {H. M.} and S. Ranta and M. M{\"a}ki and E. Kantola and M. Guina and Slichter, {D. H.} and D. Leibfried and Wilson, {A. C.}",

note = "Funding Information: Acknowledgment. S.C.B., J.-P.P., P.-Y.H., and H.M.K. all contributed equally to this work. We thank Stephen Erickson, Jenny Wu, Daniel Cole, and Yong Wan for assistance in the laboratory, and Richard Fox and Jenny Wu for comments on the manuscript. P.-Y.H., H.M.K., and S.C.B. acknowledge support of the Professional Research Experience Program (PREP), operated jointly by NIST and the University of Colorado. J.-P.P acknowledges support of the Jenny and Antti Wihuri Foundation, the Walter Ahlstr{\"o}m Foundation, and the Finnish Foundation for Technology Promotion. Vexlum Ltd. provided the gain chips for both systems described in this paper. Publisher Copyright: {\textcopyright}2023 Optica Publishing Group.",

year = "2023",

month = apr,

doi = "10.1364/josab.475467",

language = "English",

volume = "40",

pages = "773--781",

journal = "Journal of the Optical Society of America B: Optical Physics",

issn = "0740-3224",

publisher = "Optica Publishing Group (formerly OSA)",

number = "4",

}

TY - JOUR

T1 - VECSEL systems for quantum information processing with trapped beryllium ions

AU - Burd, S. C.

AU - Penttinen, J. P.

AU - Hou, P. Y.

AU - Knaack, H. M.

AU - Ranta, S.

AU - Mäki, M.

AU - Kantola, E.

AU - Guina, M.

AU - Slichter, D. H.

AU - Leibfried, D.

AU - Wilson, A. C.

N1 - Funding Information: Acknowledgment. S.C.B., J.-P.P., P.-Y.H., and H.M.K. all contributed equally to this work. We thank Stephen Erickson, Jenny Wu, Daniel Cole, and Yong Wan for assistance in the laboratory, and Richard Fox and Jenny Wu for comments on the manuscript. P.-Y.H., H.M.K., and S.C.B. acknowledge support of the Professional Research Experience Program (PREP), operated jointly by NIST and the University of Colorado. J.-P.P acknowledges support of the Jenny and Antti Wihuri Foundation, the Walter Ahlström Foundation, and the Finnish Foundation for Technology Promotion. Vexlum Ltd. provided the gain chips for both systems described in this paper. Publisher Copyright: ©2023 Optica Publishing Group.

PY - 2023/4

Y1 - 2023/4

N2 - We demonstrate two systems based on vertical-external-cavity surface-emitting lasers (VECSELs) for producing ultraviolet laser light at wavelengths of 235 and 313 nm. The systems are suitable for quantum information processing with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers.One system generates 2.4W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a gain mirror based onGaInNAs/GaAs quantum wells, enabling wavelength extension above 1200 nm with manageable strain in the GaAs lattice. This system generates 1.6Wat 1252 nm, which is converted to 41mWof 313 nm light that is used to laser cool trapped 9Be+ ions and quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates.

AB - We demonstrate two systems based on vertical-external-cavity surface-emitting lasers (VECSELs) for producing ultraviolet laser light at wavelengths of 235 and 313 nm. The systems are suitable for quantum information processing with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers.One system generates 2.4W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a gain mirror based onGaInNAs/GaAs quantum wells, enabling wavelength extension above 1200 nm with manageable strain in the GaAs lattice. This system generates 1.6Wat 1252 nm, which is converted to 41mWof 313 nm light that is used to laser cool trapped 9Be+ ions and quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates.

U2 - 10.1364/josab.475467

DO - 10.1364/josab.475467

M3 - Article

AN - SCOPUS:85152193987

SN - 0740-3224

VL - 40

SP - 773

EP - 781

JO - Journal of the Optical Society of America B: Optical Physics

JF - Journal of the Optical Society of America B: Optical Physics

IS - 4

ER -

VECSEL systems for quantum information processing with trapped beryllium ions

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä