Widely Tunable 2.6 μm GaSb Diode Lasers Utilizing Diffraction Gratings or Silicon Photonics Reflectors

We present two tunable extended cavity laserconfigurationsemitting around 2.6 μm. The gain is provided by a type-I GaSb-based quantum well heterostructure. To demonstrate the high power andbroad tuning capabilities of the gain material, an extendedcavity laser based on feedback via a diffraction grating is demonstrated.Tuning range of 154 nm, with an average output power of ~10 mW at 2.63 μm, corresponding toa peak power of ~100 mW, is demonstrated. For a more compact and integrable configuration, we demonstrate an extended cavity laser utilizing silicon photonics resonators, where the feedback and tuning is obtained via Vernier effect between two microring resonators. Here, atuning range of ~70 nm, with anaverage output power of ~1 mW at 2.55 μm, corresponding to a peak power of ~10 mW, are demonstrated.